baw56t / bav70t / BAV99T ? fast switching diode ? 2015 fairchild semiconductor corporation www.fairchildsemi.com baw56t / bav70t / BAV99T rev. 1.0 august 2015 baw56t / bav70t / BAV99T fast switching diode features ? fast switching diodes with t rr < 4.0 nsec ? surface mount device at 0.95 mm maximum height ? msl 1 per j-std-020 ? pb free and rohs compliant ? matte sn lead finish ? green mold compound ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. part number top mark package packing method baw56t jd sot-523 3l tape and reel bav70t jj sot-523 3l tape and reel BAV99T je sot-523 3l tape and reel symbol parameter value unit v rrm maximum repetitive reverse voltage 85 v i f(av) average rectified forward current single diode 150 ma dual diodes 75 t j operating junction temperature 125 c t stg storage temperature range -55 to +125 c sot-523 baw56t 3 1 2 3 1 2 3 1 2 bav70t BAV99T
baw56t / bav70t / BAV99T ? fast switching diode ? 2015 fairchild semiconductor corporation www.fairchildsemi.com baw56t / bav70t / BAV99T rev. 1.0 2 thermal characteristics (1) values are at t a = 25c unless otherwise noted. note: 1. device mounted on fr-4 pcb minimum land pad electrical characteristics values are at t a = 25c unless otherwise noted. parameters are tested per individual diode. symbol parameter value unit p d power dissipation 150 mw r ja thermal resistance, junction-to-ambient 500 c/w jl junction-to-lead thermal characteristics, thermocouple soldered to cathode 195 c/w symbol parameter conditions min. max. unit bv r reverse breakdown voltage i r = 1 a85v i r reverse leakage current v r = 75 v 2 a v r = 25 v 0.03 v f forward voltage i f = 1 ma 0.715 v i f = 10 ma 0.855 i f = 50 ma 1.00 i f = 150 ma 1.25 c d diode capacitance v r = 0 v, f = 1 mhz 4 pf t rr reverse recovery time i f = i r = 10 ma, i rr = 0.1 x i r r l = 100 4ns
baw56t / bav70t / BAV99T ? fast switching diode ? 2015 fairchild semiconductor corporation www.fairchildsemi.com baw56t / bav70t / BAV99T rev. 1.0 3 typical performance characteristics figure 1. forward voltage vs. forward current figure 2. reverse current vs. reverse voltage figure 3. reverse voltage vs. reverse current figure 4. power derating curve figure 5. total capacitance vs. reverse voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 t a = -40 o c t a = 25 o c t a = 150 o c i f - forward current (ma) v f - forward voltage (v) 10 20 30 40 50 60 70 80 90 100 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 t a = 150 o c t a = 25 o c t a = - 40 o c i r - reverse current (na) v r - reverse voltage (v) 1 10 100 140 145 150 155 160 165 170 t a = 25 o c v r - reverse voltage (v) i r - reverse current ( a) 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 p d - power dissipation (w) t l - lead temperature ( o c) w.r.t. cathode 0123456789101112131415 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BAV99T bav70t c j - junction capacitance (pf) v r - reverse voltage (v) baw56t
baw56t / bav70t / BAV99T ? fast switching diode ? 2015 fairchild semiconductor corporation www.fairchildsemi.com baw56t / bav70t / BAV99T rev. 1.0 4 physical dimensions figure 6. 3-lead, sot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